Related Experiment Video
Updated: Jun 28, 2026
09:38
Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers
Muhan Choi1, Susumu Shinohara, Takahisa Harayama
1Department of Nonlinear Science, ATR Wave Engineering Laboratories, Soraku-gun, Kyoto, Japan. choi@atr.jp
Optics Express
|October 30, 2008
Abstract:
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
