Thermo-optic effect and optical third order nonlinearity in nc-Si embedded in a silicon-nitride film

Using a self-diffraction experiment with 7ns pulses at 532nm we studied a silicon nitride film containing silicon nanoclusters (nc-Si) of 3.1+/-0.37 nm mean size. The sample was prepared by remote plasma-enhanced chemical vapor deposition (RPECVD), and we found that its nonlinearity consists of a combination of electronic and thermal contributions. By varying the repetition rate of the laser, we discriminated the responsible mechanisms for the nonlinear response. Using this procedure we determined a total /chi((3))1111/ = 3.3x10(-10)esu, n2 = 2.7x10(-16) m(2)/W, beta = 1x10(-9) m/W and dn/dT =1x10(-4) degrees C(-1) for our sample. We also show results for the optical Kerr effect using 80 fs pulses at 820 nm. The purely electronic nonlinearity measured is characterized by /chi((3))1111/=9.5 x10(-11) esu.