Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Metallic Solids02:37

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability. Many...
Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[Research progress in nasal mucosa organoid technology].

Zhonghua er bi yan hou tou jing wai ke za zhi = Chinese journal of otorhinolaryngology head and neck surgery·2026
Same author

[Study on the relationship between occupational stress and social support with job burnout of locomotive drivers].

Zhonghua lao dong wei sheng zhi ye bing za zhi = Zhonghua laodong weisheng zhiyebing zazhi = Chinese journal of industrial hygiene and occupational diseases·2026
Same author

[Machine learning models to predict intestinal necrosis in acute mesenteric venous thrombosis].

Zhonghua wai ke za zhi [Chinese journal of surgery]·2026
Same author

[Clinical characteristics of cyclic vomiting syndrome and the therapeutic efficacy of chlorpromazine combined with promethazine].

Zhonghua er ke za zhi = Chinese journal of pediatrics·2026
Same author

[Evaluation of a cut-off value for the plasma aldosterone-to-renin ratio in screening for primary aldosteronism in different age and gender groups].

Zhonghua xin xue guan bing za zhi·2025
Same author

[Mid-term analysis of a randomized controlled clinical trial on different transfusion strategies for cardiac valve surgery].

Zhonghua wai ke za zhi [Chinese journal of surgery]·2025

Related Experiment Video

Updated: Jun 28, 2026

Accumulation and Analysis of Cuprous Ions in a Copper Sulfate Plating Solution
07:00

Accumulation and Analysis of Cuprous Ions in a Copper Sulfate Plating Solution

Published on: March 20, 2019

Analytical characterization of CuInS(2) semiconductor material.

C F Hung1, P Y Chen, L Y Weng

  • 1National Tsing Hua University, Hsinchu, Taiwan 300, People's Republic of China.

Talanta
|April 1, 1984
PubMed
Summary

Accurate stoichiometry and trace element analysis of Copper Indium Disulfide (CuInS2) were achieved using novel analytical methods. These techniques ensure precise quantification of major components and impurities for material characterization.

More Related Videos

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Related Experiment Videos

Last Updated: Jun 28, 2026

Accumulation and Analysis of Cuprous Ions in a Copper Sulfate Plating Solution
07:00

Accumulation and Analysis of Cuprous Ions in a Copper Sulfate Plating Solution

Published on: March 20, 2019

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Area of Science:

  • Analytical Chemistry
  • Materials Science
  • Inorganic Chemistry

Background:

  • Accurate stoichiometry is crucial for the performance of semiconductor materials like Copper Indium Disulfide (CuInS2).
  • Quantifying trace elements, including dopants and impurities, is essential for understanding and controlling material properties.

Purpose of the Study:

  • To develop systematic analytical procedures for determining the stoichiometry of CuInS2.
  • To establish methods for estimating trace elements, dopants, and impurities in CuInS2.

Main Methods:

  • Samples digested in oxidizing acid to yield Cu(2+), In(3+), and SO(4)(2-) ions.
  • Sequential determination of copper (electro-deposition, EDTA titration), indium (titrimetry), and sulfate (gravimetry).
  • Multistage procedures involving electro-deposition, solvent extraction, atomic-absorption spectrometry, and neutron-activation analysis for trace elements.

Main Results:

  • Relative errors for Cu and In determination were -0.08% and +0.11%, respectively, ensuring accurate stoichiometry.
  • Sulfate determination showed an acceptable relative error of -0.66%.
  • Trace elements determined down to submicrogram levels using optimized, radioisotope-tracer-aided procedures.

Conclusions:

  • Developed robust analytical methods for precise stoichiometry assessment of CuInS2.
  • Established effective techniques for comprehensive trace element analysis in CuInS2.
  • Procedures enable accurate material characterization for research and development.