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Updated: Jun 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Determination of germanium by potentiometric stripping analysis and adsorption potentiometric stripping analysis
1Department of Chemistry, Jinan University, Guangzhou, People's Republic of China.
Abstract:
Potentiometric stripping analysis was applied to determination of germanium(IV) in 0.2M NH(3)-NH(4)Cl (pH 8.4) buffer solution at -1.8 V (vs. Ag/AgCl), with dissolved oxygen or Hg(II) as oxidant. The sensitivity was 8.5 x 10(-9)M in the presence of 2.0 x 10(-5)M Hg(II) with plating for 15 min after deaeration for 20 min. Cyclic voltammetry revealed that GE(IV) å Ge at the surface of the mercury-film electrode in a one-step irreversible reduction reaction, and the Ge at the electrode was oxidized by dissolved oxygen in the solution. The presence of complexing agents such as Alizarin Red (ARS), which forms a Ge(IV) complex adsorbed at the electrode, improved the sensitivity by one order of magnitude. The presence of adsorption was revealed by the temperature coefficient, the electrocapillary curve and cyclic voltammetry. Ge-containing samples were analysed by the proposed methods and agreement with the results obtained by other methods was excellent.
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