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Updated: Jun 28, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
FTIR study of cerium doped electron superconductors R(1.85)Ce(0.15)CuO(4) (R=Nd, Pr, Sm, Eu and Gd)
1Department of Physics, Pondicherry Engineering College, Pondicherry 605 014, India.
Abstract:
Systematic FTIR study of electron doped compounds of the T'-series are presented in this paper. Spectroscopic techniques are more sensitive than any other technique to the disorder due to doping in the structure. Polycrystalline 'as prepared' bulk samples, allows one to observe c-axis vibrations clearly, avoiding in-plane (a-b) polarizability due to charge carriers. Even though all R(2)CuO(4)(R=Nd, Pr, Sm, Eu and Gd) doped compounds belong to T' structure, due to the different sizes of the rare earth ionic radii, the structure stabilization is very difficult to achieve since copper-oxygen distance vary from compound to compound and hence the phonon characteristic spectrum of the series. The role of apical oxygen in T-structure is discussed in detail from the point of factor group analysis and compared with the V-structure. The IR study of R(2)CuO(4) (214) compound with Ce doping reveals the difference and similarities of the electronic properties between hole doping and electron doping when compared with T-structure compounds.

