Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
Metallic Solids02:37

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability. Many...
Hybridization of Atomic Orbitals I03:24

Hybridization of Atomic Orbitals I

The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Comment on "Absence of Off-Diagonal Long-Range Order in hcp ^{4}He Dislocation Cores".

Physical review letters·2023
Same author

Unveiling new quantum phases in the Shastry-Sutherland compound SrCu<sub>2</sub>(BO<sub>3</sub>)<sub>2</sub> up to the saturation magnetic field.

Nature communications·2023
Same author

Real-Frequency Response Functions at Finite Temperature.

Physical review letters·2021
Same author

A quantum magnetic analogue to the critical point of water.

Nature·2021
Same author

Extended Crossover from a Fermi Liquid to a Quasiantiferromagnet in the Half-Filled 2D Hubbard Model.

Physical review letters·2020
Same author

Thermal Critical Points and Quantum Critical End Point in the Frustrated Bilayer Heisenberg Antiferromagnet.

Physical review letters·2018

Related Experiment Video

Updated: Jun 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Binding of a 3He impurity to a screw dislocation in solid 4He.

P Corboz1, L Pollet, N V Prokof'ev

  • 1Theoretische Physik, ETH Zurich, 8093 Zurich, Switzerland.

Physical Review Letters
|November 13, 2008
PubMed
Summary

Helium-3 atoms bind to screw dislocations in solid Helium-4, explaining experimental peaks in specific heat and increased shear modulus at low temperatures.

Area of Science:

  • Condensed Matter Physics
  • Quantum Fluids
  • Materials Science

Background:

  • Solid Helium-4 exhibits complex behavior influenced by isotopic impurities.
  • Screw dislocations are significant defects in crystalline structures.
  • Understanding impurity effects is crucial for superfluidity.

Purpose of the Study:

  • To investigate the behavior of Helium-3 (3He) atoms near screw dislocations in solid Helium-4 (4He).
  • To determine the binding energy and localized state density of 3He near dislocations.
  • To explain experimental observations of specific heat and shear modulus anomalies.

Main Methods:

  • First-principles simulations were employed to model the probability density of 3He.
  • Calculations focused on the vicinity of screw dislocations in solid 4He.

More Related Videos

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
11:50

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions

Published on: June 13, 2015

Related Experiment Videos

Last Updated: Jun 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
11:50

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions

Published on: June 13, 2015

  • The binding energy and density of states were determined computationally.

    • Main Results:

    • The binding energy of 3He to the dislocation nucleus was calculated as E(B)=0.8+/-0.1 K.
    • The density of localized states at larger distances was determined.
    • The model successfully reproduced the experimental peak in specific heat.
    • The model also explained the observed increase in shear modulus at low temperatures.

    Conclusions:

    • 3He atoms localize near screw dislocations in solid 4He.
    • This localization explains key experimental observations in specific heat and shear modulus.
    • The role of 3He in superfluid defect dynamics is highlighted.