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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Three-dimensional atom mapping of boron in implanted silicon.

O Cojocaru-Mirédin1, E Cadel, B Deconihout

  • 1Université de Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l'Université, 76801 Saint Etienne de Rouvray, France.

Ultramicroscopy
|November 26, 2008
PubMed
Summary

Laser-assisted wide-angle atom probe (LaWaTAP) revealed boron clusters in silicon, challenging previous models. This advanced technique detected larger boron interstitial clusters (BICs) than previously assumed, impacting semiconductor research.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Understanding boron redistribution is crucial for silicon semiconductor device performance.
  • Previous studies often assumed smaller boron interstitial clusters (BICs).

Purpose of the Study:

  • To investigate the redistribution of boron in highly implanted silicon.
  • To compare the capabilities of laser-assisted wide-angle atom probe (LaWaTAP) and secondary ion mass spectrometry (SIMS) for dopant profiling.
  • To identify and characterize boron clusters in annealed silicon.

Main Methods:

  • High-dose boron implantation into silicon (10keV; 5x10^15 at/cm^2).
  • Annealing at 600°C for 1 hour.
  • Analysis using laser-assisted wide-angle atom probe (LaWaTAP) and secondary ion mass spectrometry (SIMS).

Main Results:

  • LaWaTAP and SIMS showed comparable boron profiles under 75nm depth.
  • LaWaTAP detected fine-scale fluctuations, indicating boron clustering, not visible in SIMS.
  • Identified numerous boron clusters (50-300 atoms) on {001} planes, interpreted as BICs, containing ~7at% boron.

Conclusions:

  • LaWaTAP provides higher resolution for detecting nanoscale phenomena like boron clustering.
  • The identified BICs are significantly larger than those typically considered in theoretical models.
  • These findings necessitate a revision of models concerning dopant behavior and cluster formation in silicon.