Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Transmission Line Design Considerations01:23

Transmission Line Design Considerations

Aluminum has become the material of choice for overhead transmission lines, surpassing copper due to its abundance and cost-effectiveness. The most prevalent type is the aluminum conductor, steel-reinforced (ACSR), which combines aluminum strands around a steel core. Other variants include all-aluminum conductors (AAC), all-aluminum alloy conductors (AAAC), aluminum conductor alloy-reinforced (ACAR), and aluminum-clad steel conductors. Advanced designs, such as aluminum conductors with steel...
Lossless Lines01:23

Lossless Lines

In electrical engineering, a lossless transmission line is characterized by a purely imaginary propagation constant and a resistive characteristic impedance. The ABCD parameters, which describe the relationship between the input and output voltages and currents, indicate an equivalent π circuit with an imaginary series impedance and a shunt admittance. This results in a transmission line that, when the product of the phase constant (beta) and the length of the line is less than pi, exhibits...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Topical sucralfate in the management of peristomal skin disease: an open study.

Clinical and experimental dermatology·2001
Same author

The bio-availability of fluoride from black tea.

Journal of dentistry·2001
Same author

Quality use of medicines in the community: the Australian experience.

British journal of clinical pharmacology·2001
Same author

Genomic organization and comparative analysis of the mouse tuberous sclerosis 1 (Tsc1) locus.

Mammalian genome : official journal of the International Mammalian Genome Society·2000
Same author

The spectrum of skin disorders in abdominal stoma patients.

The British journal of dermatology·2000
Same author

Characterisation of inhibitory and excitatory postsynaptic currents of the rat medial superior olive.

The Journal of physiology·2000
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Jun 27, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

Free carrier lifetime modification for silicon waveguide based devices.

N M Wright1, D J Thomson, K L Litvinenko

  • 1Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK. Nicholas.wright@surrey.ac.uk

Optics Express
|November 26, 2008
PubMed
Summary
This summary is machine-generated.

Silicon ion irradiation significantly reduces free carrier lifetime in silicon waveguides, mitigating two-photon absorption (TPA) effects. Optimized irradiation parameters minimize excess absorption, potentially enabling net gain without external carrier removal.

More Related Videos

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
09:15

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
11:08

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Published on: November 30, 2012

Related Experiment Videos

Last Updated: Jun 27, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
09:15

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
11:08

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Published on: November 30, 2012

Area of Science:

  • Materials Science
  • Optoelectronics
  • Photonics

Background:

  • Two-photon absorption (TPA) in silicon waveguides generates free carriers, increasing optical loss.
  • Reducing free carrier density is crucial for efficient nonlinear optical processes in silicon photonics.

Purpose of the Study:

  • To investigate the impact of silicon ion irradiation on free carrier lifetime in silicon waveguides.
  • To assess the potential of ion implantation for mitigating TPA-induced losses.

Main Methods:

  • Experimental silicon ion implantation into silicon waveguides.
  • Measurement of free carrier lifetime.
  • Optical absorption measurements.
  • Raman scattering simulations.

Main Results:

  • Silicon ion implantation significantly reduces free carrier lifetime.
  • Excess optical absorption can be minimized by optimizing irradiation energy and dose.
  • Simulations indicate potential for net gain without reverse bias carrier removal.

Conclusions:

  • Silicon ion irradiation is an effective method to reduce free carrier lifetime in silicon waveguides.
  • Careful control of irradiation parameters is key to balancing carrier lifetime reduction and optical loss.
  • This technique offers a pathway to enhanced performance in silicon photonic devices.