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Updated: Jun 27, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Free carrier lifetime modification for silicon waveguide based devices
N M Wright1, D J Thomson, K L Litvinenko
1Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK. Nicholas.wright@surrey.ac.uk
Abstract:
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.
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