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Published on: December 5, 2015
Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics
Machteld I van der Meulen1, Nikolay Petkov, Michael A Morris
1Materials and Supercritical Fluids Group, Department of Chemistry, and the Tyndall National Institute, University College Cork, Cork, Ireland.
Abstract:
Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
