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Determination of complex dielectric functions at HfO(2)/Si interface by using STEM-VEELS
1Analytical Engineering Center, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea. jucheol.park@samsung.com
Micron (Oxford, England : 1993)
|November 28, 2008
Summary
This study determined the dielectric functions and refractive index of HfO(2) using electron energy loss spectroscopy and DFT calculations, finding good agreement between methods for this important material.
Area of Science:
- Materials Science
- Solid State Physics
- Quantum Chemistry
Background:
- Hafnium oxide (HfO2) is a crucial material in semiconductor technology.
- Accurate characterization of its optical and electronic properties is essential for device optimization.
Purpose of the Study:
- To determine the complex dielectric functions and refractive index of atomic layer deposited HfO2.
- To compare experimental results with theoretical calculations using Density Functional Theory (DFT).
- To elucidate the electronic structure of HfO2.
Main Methods:
- Valence Electron Energy Loss Spectroscopy (VEELS) in a Scanning Transmission Electron Microscope (STEM) using a line scan method.
- Density Functional Theory (DFT) calculations for monoclinic HfO2.
Main Results:
- Complex dielectric functions and refractive index were determined experimentally and theoretically.
- Experimental (2.18) and calculated (2.1) refractive indices showed good agreement.
- Comparison of inter-band transition strength (STEM-VEELS) with Density of States (DOS) from DFT revealed the electronic structure.
Conclusions:
- Experimental and DFT methods provide consistent results for HfO2 dielectric properties.
- The study successfully correlated experimental optical properties with theoretical electronic structure.
- This work validates combined experimental and computational approaches for material characterization.
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