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300 mm reference wafer fabrication by using direct laser lithography.

Hyug-Gyo Rhee¹, Dongik Kim, Seung-Ki Hong

¹Space Optics Research Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea. hrhee@kriss.re.kr

The Review of Scientific Instruments

|December 3, 2008

Summary

We developed a direct laser lithography technique to create chromium patterns on silicon wafers. This method achieves high precision for fabricating microscale patterns up to 360-mm in diameter.

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Area of Science:

Materials Science
Nanotechnology
Optics

Background:

Accurate fabrication of reference patterns is crucial for semiconductor manufacturing and metrology.
Existing methods may have limitations in resolution, pattern size, or precision.

Purpose of the Study:

To introduce a novel direct laser lithography (DLL) method for fabricating chromium reference patterns on silicon wafers.
To evaluate the performance of the DLL method in terms of pattern size, position uncertainty, and height.

Main Methods:

Direct laser lithography (DLL) was employed to pattern chromium films on silicon substrates.
The process parameters were optimized to achieve desired pattern features.

Main Results:

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The DLL method successfully fabricated chromium patterns with a maximum diameter of 360 mm.

Achieved a position uncertainty of 651 nm for the fabricated patterns.

The minimum linewidth achieved was approximately 0.8 micrometers, with a maximum pattern height exceeding 400 nm.

Conclusions:

Direct laser lithography offers a precise and scalable approach for creating high-resolution chromium reference patterns.
The demonstrated capabilities are suitable for applications requiring accurate micro/nanofabrication on silicon wafers.