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Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Modes of Operations of BJT

Modes of Operations of BJT

A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...

Switching of BJT

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

Configurations of BJT

Configurations of BJT

Bipolar Junction Transistors (BJTs) are categorized into various types based on their configurations, each with distinct characteristics and applications. The configurations are primarily differentiated by which terminal—base, emitter, or collector—is common to both the input and output circuits.
The common base configuration is noted for its high voltage gain, positioning it as an ideal choice for single-stage amplifier circuits, such as microphone pre-amplifiers. A notable characteristic of...

BJT Amplifiers

BJT Amplifiers

Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...

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Updated: Jun 27, 2026

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Molecular transistors based on BDT-type molecular bridges.

W D Wheeler¹, Yu Dahnovsky

¹Department of Chemistry/3838, University of Wyoming, 1000 E. University Avenue, Laramie, Wyoming 82071, USA. dwheeler@uwyo.edu

The Journal of Chemical Physics

|December 3, 2008

Summary

We investigated electron correlations in molecular transistors using ab initio calculations. The nitro-benzene-dithiol transistor exhibits strong negative differential resistance and a significant gate field effect, unlike the benzene-dithiol transistor.

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Published on: November 7, 2016

Area of Science:

Quantum Chemistry
Molecular Electronics
Condensed Matter Physics

Background:

Molecular transistors are crucial for nanoscale electronics.
Understanding electron correlations is key to predicting device behavior.
1,4-benzene-dithiol (BDT) and 2-nitro-1,4-benzene-dithiol (nitro-BDT) are common molecular bridges.

Purpose of the Study:

To investigate the effect of electron correlations in molecular transistors.
To analyze the performance of BDT and nitro-BDT based molecular bridges.
To explore negative differential resistance and gate field effects.

Main Methods:

Ab initio electron propagator calculations.
Verification of computational methods on BDT transistors.
Analysis of molecular orbital picture and Dyson poles.

Main Results:

No gate field effect observed for BDT transistors, matching experimental data.
Predicted strong negative differential resistance in nitro-BDT transistors.
Demonstrated a significant gate field effect in nitro-BDT transistor conductance.

Conclusions:

Electron correlations significantly impact molecular transistor performance.
Nitro-BDT based transistors show potential for fast current modulation.
The study provides insights into the mechanisms of negative differential resistance and gate field effects.