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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Indirect pump scheme for quantum cascade lasers: dynamics of electron-transport and very high T0-values
Masamichi Yamanishi1, Kazuue Fujita, Tadataka Edamura
1Central Research Laboratories, HAMAMATSU PHOTONICS K.K., Hamakita-ku, Hamamatsu, 434-8601 Japan. masamiya@crl.hpk.co.jp
Abstract:
An alternative pump scheme, named indirect pump one is proposed to clarify its own feasibility. The high device performances of 8 microm quantum cascade lasers with cavity lengths of 4 mm and 1.5 mm are demonstrated: low threshold current densities of 2.7 and 3.3 kA/cm2 and maximum output powers of 362 and 50 mW at room temperature, and high T0-values of 243 and 303 K around room temperature. The higher T0-value, 303 K is the highest record ever reported with quantum cascade lasers. The high stability for temperature changes is interpreted in terms of the indirect pumping model.

