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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module.

S C Mao¹, S H Tao, Y L Xu

¹Institute of Microelectronics, A*STAR, 11 Science Park II, Singapore.

|December 10, 2008

Summary

We developed low-hydrogen silicon nitride (SiN) films using plasma-enhanced chemical vapor deposition (PECVD). These films enable low-loss sub-micron waveguides crucial for next-generation photonic integrated circuits.

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Low-hydrogen silicon nitride (SiN) films are essential for integrated photonics.
Controlling hydrogen content is critical for optical loss in SiN films.
Plasma-enhanced chemical vapor deposition (PECVD) is a common method for SiN film deposition.

Purpose of the Study:

To investigate the preparation of low-hydrogen SiN films at low temperatures.
To determine the influence of SiH(4)/N(2) flow ratio and RF power on hydrogen content.
To demonstrate low-loss sub-micron SiN waveguides using optimized films.

Main Methods:

Low-temperature (350°C) PECVD was employed for SiN film synthesis.
Systematic variation of SiH(4)/N(2) flow ratio and radio frequency (RF) power.
Fabrication and optical loss characterization of sub-micron SiN waveguides at 1550 nm.

Main Results:

Optimized SiN films with reduced hydrogen content were achieved.
A sub-micron SiN waveguide exhibited a low propagation loss of -2.1±0.2 dB/cm.
Waveguide dimensions were 700 nm x 400 nm.

Conclusions:

Low-hydrogen SiN films prepared by low-temperature PECVD are suitable for photonic applications.
The demonstrated low-loss waveguides show promise for integrated photonics.
These findings support the use of SiN in advanced communication systems.