Porous silicon as functionalized material for immunosensor application

Recently, for sensor application, porous silicon has received a great deal of attention due to the high specific surface area and the easy fabrication using some established processes of the usual silicon technology. We herein, report the development of a novel immunosensors based on porous silicon for antigen detection. The multilayer immunosensor structure was fabricated following the successive steps: APTS self-assembled monolayer (SAM) layer, glutaaldehyde linker, anti-rabbit IgG binding. The insulating properties of the aminopropyl-triethoxysilane (APTS) monolayer were studied with cyclic voltammetry and the molecular structure was characterized with Fourier-transform infrared (FTIR) technique. The binding between antibody and different antigen concentration (rabbit IgG) was monitored by measuring the capacitance-voltage curve of the antibody functionalized EIS structure. A detection limit of 10ng/ml of antigen can be detected.