Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Lewis Structures of Molecular Compounds and Polyatomic Ions02:54

Lewis Structures of Molecular Compounds and Polyatomic Ions

To draw Lewis structures for complicated molecules and molecular ions, it is helpful to follow a step-by-step procedure as outlined:
Electron Affinity03:07

Electron Affinity

The electron affinity (EA) is the energy change for adding an electron to a gaseous atom to form an anion (negative ion).
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Moiré Potential, Lattice Corrugation, and Band Gap Spatial Variation in a Twist-Free MoTe<sub>2</sub>/MoS<sub>2</sub> Heterobilayer.

The journal of physical chemistry letters·2020
Same author

Microstructure and mechanical behavior of metallic glass fiber-reinforced Al alloy matrix composites.

Scientific reports·2016
Same author

Log-normal diameter distribution of Pd-based metallic glass droplet and wire.

Scientific reports·2015
Same author

Absence of a proximity effect for a thin-films of a Bi2Se3 topological insulator grown on top of a Bi2Sr2CaCu2O(8+δ) cuprate superconductor.

Physical review letters·2014
Same author

Use of FM1-43, a membrane-specific fluorescent dye, to estimate plasma membrane integrity in the cryopreservation of green algae.

Cryo letters·2014
Same author

The mechanism of caesium intercalation of graphene.

Nature communications·2013
Same journal

Anharmonic phonons via quantum thermal bath simulations.

The Journal of chemical physics·2026
Same journal

Quantum simulation of alignment dependent differential cross sections in co-propagating molecular beams at cold collision energies.

The Journal of chemical physics·2026
Same journal

Non-additive ion effects on the coil-globule equilibrium of a generic polymer in aqueous salt solutions.

The Journal of chemical physics·2026
Same journal

Insights into the unexpected small reduction of the temperature of maximum density of water by lithium chloride addition.

The Journal of chemical physics·2026
Same journal

Optical frequency comb double-resonance spectroscopy of the 9030-9175 cm-1 states of ethylene.

The Journal of chemical physics·2026
Same journal

Time reversal breaking of colloidal particles in cells.

The Journal of chemical physics·2026
See all related articles

Related Experiment Video

Updated: Jun 26, 2026

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
09:15

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Fluorine diffusion assisted by diffusing silicon on the Si(111)-(7x7) surface.

Y Fujikawa1, S Kuwano, K S Nakayama

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. fujika-0@imr.tohoku.ac.jp

The Journal of Chemical Physics
|December 24, 2008
PubMed
Summary
This summary is machine-generated.

Fluorine atom diffusion on silicon surfaces is governed by silicon atom movement. Silicon deposition enhances fluorine hopping, confirming silicon diffusion as the rate-limiting step in the reaction process.

More Related Videos

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Related Experiment Videos

Last Updated: Jun 26, 2026

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
09:15

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Area of Science:

  • Surface science
  • Atomic diffusion studies
  • Materials science

Background:

  • Understanding atom diffusion on semiconductor surfaces is crucial for microelectronics fabrication.
  • The behavior of fluorine on silicon surfaces is complex and not fully understood.
  • Previous studies have not definitively identified the rate-determining step in fluorine diffusion on Si(111)-(7x7).

Purpose of the Study:

  • To investigate the diffusion mechanism of fluorine (F) atoms on the Si(111)-(7x7) surface.
  • To determine the kinetic parameters governing fluorine atom hopping.
  • To elucidate the role of silicon (Si) diffusion in the overall fluorine diffusion process.

Main Methods:

  • High-temperature scanning tunneling microscopy (HT-STM) was employed to observe fluorine diffusion.
  • Kinetic parameters for fluorine hopping were analyzed.
  • The effect of silicon deposition on fluorine hopping was studied.
  • Theoretical modeling was used to explore the diffusion mechanism.

Main Results:

  • The kinetic parameters for fluorine hopping closely matched those for silicon diffusion.
  • Deposition of silicon onto the surface significantly enhanced fluorine atom hopping.
  • Theoretical analysis indicated that silicon diffusion dictates the rate of fluorine diffusion.
  • The replacement of fluorine adsorption sites by diffusing silicon atoms was identified as the key mechanism.

Conclusions:

  • Silicon diffusion is the rate-determining step for fluorine atom diffusion on the Si(111)-(7x7) surface.
  • The interaction between diffusing silicon atoms and adsorbed fluorine atoms is central to the observed diffusion behavior.
  • This study provides critical insights into surface reaction mechanisms relevant to semiconductor processing.