2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Lasers

Background:

• Optically pumped semiconductor disk lasers (OPSDLs) are crucial for high-power applications.
• Integrating dissimilar semiconductor materials, like InP and GaAs-based systems, presents significant challenges due to lattice mismatch.
• Existing monolithic growth techniques limit the performance and material choices for OPSDLs.

Purpose of the Study:

• To demonstrate a high-power optically pumped semiconductor disk laser using wafer fusion.
• To showcase the advantages of wafer fusion for integrating lattice-mismatched materials in laser devices.
• To explore the potential for extending the wavelength range of semiconductor disk lasers.

Main Methods:

• Wafer fusion of an Indium Phosphide (InP)-based active medium with a Gallium Arsenide/Aluminum Gallium Arsenide (GaAs/AlGaAs) distributed Bragg reflector (DBR).
• Fabrication of a semiconductor disk laser device utilizing the fused wafer structure.
• Characterization of the laser's output power and spectral performance.

Main Results:

• Achieved a record output power exceeding 2.6 Watts.
• Demonstrated laser operation in the spectral range around 1.57 micrometers.
• Confirmed the significant advantages of wafer fusion over monolithic growth for OPSDLs.

Conclusions:

• Wafer fusion is a viable and advantageous technique for fabricating high-power semiconductor disk lasers.
• This approach enables the integration of lattice-mismatched materials, including quantum-well and quantum-dot active media.
• The presented method offers a pathway to extend the operational wavelength range of semiconductor disk lasers.