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Updated: Jun 26, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Emmanouil Frantzeskakis1, Stéphane Pons, Hossein Mirhosseini
1Laboratoire de Spectroscopie Electronique, Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), station 3, CH-1015 Lausanne-Switzerland.
Researchers explored how spin-orbit splitting and quantum confinement affect Bi-Ag-Si structures. Tuning the silver layer thickness modifies the electronic structure, enabling potential silicon-based spintronic devices.
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