Related Experiment Video
Updated: Jun 26, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Quantum Hall to insulator transition in the bilayer quantum Hall ferromagnet
Ganpathy Murthy1, Subir Sachdev
1Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055, USA.
Abstract:
We describe a phase transition of the bilayer quantum Hall ferromagnet at nu=1. In the presence of static disorder (modeled by a periodic potential), bosonic S=1/2 spinons undergo a superfluid-insulator transition while preserving ferromagnetism. The Mott insulating phase has an emergent U(1) photon, and the transition is between Higgs and Coulomb phases of this photon. Consequences for charge and counterflow conductivity and for interlayer tunneling conductance are discussed.
Related Concept Videos
The Hall Effect
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Valence Bond Theory
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Ferromagnetism
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

