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Related Concept Videos

Network Covalent Solids02:18

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
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Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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1T-TiSe2: semimetal or semiconductor?

Julia C E Rasch1, Torsten Stemmler, Beate Müller

  • 1Institut für Physik, Humboldt-Universität zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany. rasch@ill.fr

Physical Review Letters
|December 31, 2008
PubMed
Summary
This summary is machine-generated.

The semimetallic behavior of 1T-TiSe2 is re-evaluated. Water adsorption on 1T-TiSe2 surfaces confirms its semiconducting nature with an extremely small band gap, resolving previous debates.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Surface Science

Background:

  • The electronic properties of 1T-TiSe2 have been debated, with conflicting reports on its semimetallic versus semiconducting nature.
  • Previous photoemission studies suggested semiconducting behavior but faced challenges in determining the unoccupied conduction band.

Purpose of the Study:

  • To definitively determine the electronic band structure of 1T-TiSe2.
  • To resolve the controversy regarding the semimetallic versus semiconducting nature of 1T-TiSe2.

Main Methods:

  • High-resolution photoemission spectroscopy.
  • Surface modification via H2O adsorption on the van der Waals-like surface of 1T-TiSe2.
  • Band structure analysis.

Main Results:

  • H2O adsorption induced a distinct band bending on the 1T-TiSe2 surface.
  • This band bending led to the filling of the lowest conduction band, confirming semiconducting behavior.
  • The material exhibits an extremely small band gap.

Conclusions:

  • 1T-TiSe2 is unequivocally a semiconductor with a very small band gap.
  • The H2O adsorption method effectively probes and confirms the electronic band structure of materials like 1T-TiSe2.