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Homoclinic snaking in a semiconductor-based optical system.

S Barbay¹, X Hachair, T Elsass

¹Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France. sylvain.barbay@lpn.cnrs.fr

Physical Review Letters

|December 31, 2008

Summary

Homoclinic snaking was observed in a vertical-cavity semiconductor optical amplifier. This study details the bifurcation sequence and shows where localized pattern formation is inhibited.

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Area of Science:

Nonlinear optics
Semiconductor physics
Optical engineering

Background:

Vertical-cavity semiconductor optical amplifiers (VCSOAs) are key components in optical communication and information processing.
Understanding the complex dynamics of localized states in these devices is crucial for advanced applications.
Homoclinic snaking is a complex nonlinear phenomenon observed in various physical systems.

Purpose of the Study:

To experimentally observe and characterize homoclinic snaking in VCSOAs.
To investigate the bifurcation sequence leading to localized states and patterns.
To identify parameter regimes where the formation of localized patterns is suppressed.

Main Methods:

Experimental setup utilizing a quasi-one-dimensional and two-dimensional VCSOA.
Observation of optical field patterns and intensity profiles.
Analysis of bifurcation diagrams and parameter space.

Main Results:

Experimental confirmation of homoclinic snaking in VCSOAs.
Detailed observation of the bifurcation sequence from single localized states to localized patterns (clusters).
Identification of a specific parameter region where cluster states are inhibited.

Conclusions:

The experimental results align well with theoretical and numerical predictions for homoclinic snaking.
The study provides insights into the formation and inhibition of localized patterns in VCSOAs.
This work contributes to the fundamental understanding and potential applications of nonlinear dynamics in semiconductor optical devices.