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Updated: Jun 26, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Homopolar bond formation in ZnV2O4 close to a metal-insulator transition
V Pardo1, S Blanco-Canosa, F Rivadulla
1Departamento de Física Aplicada, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain. victor.pardo@usc.es
Abstract:
Electronic structure calculations for spinel vanadate ZnV2O4 show that partial electronic delocalization in this system leads to a structural instability, with the formation of V-V dimers along the [011] and [101] directions, and readily accounts for the intriguing magnetic structure of this material. The formation of V-V bonds is a consequence of the proximity to the itinerant-electron boundary and is not related to orbital ordering. We discuss how this mechanism naturally couples charge and lattice degrees of freedom in magnetic insulators close to such a crossover.
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