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Updated: Jun 26, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Observation of distinct electron-phonon couplings in gated bilayer graphene
L M Malard1, D C Elias, E S Alves
1Departamento de Física, Universidade Federal de Minas Gerais, 30123-970, Belo Horizonte, Brazil.
Abstract:
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and antisymmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
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