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Updated: Jun 26, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Photoluminescence ring formation in coupled quantum wells: excitonic versus ambipolar diffusion
1Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot, Israel. mstern@weizmann.ac.il
Abstract:
In this Letter, we study the diffusion properties of photoexcited carriers in coupled quantum wells around the Mott transition. We find that the diffusion of unbound electrons and holes is ambipolar and is characterized by a large diffusion coefficient, similar to that found in p-i-n junctions. Correlation effects in the excitonic phase are found to significantly suppress the carriers' diffusion. We show that this difference in diffusion properties gives rise to the appearance of a photoluminescence ring pattern around the excitation spot at the Mott transition.
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