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Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Published on: July 21, 2018

Plasmon-enhanced emission from optically-doped MOS light sources.

Aaron Hryciw¹, Young Chul Jun, Mark L Brongersma

¹Geballe Laboratory for Advanced Materials, Stanford University Stanford, CA 94305, USA.

|January 9, 2009

Summary

We demonstrate significant spontaneous emission rate enhancement in metal-dielectric-semiconductor structures. This research paves the way for efficient, high-speed, CMOS-compatible optical sources.

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Area of Science:

Optoelectronics
Materials Science
Nanophotonics

Background:

Metal-dielectric-semiconductor structures offer unique optical properties.
Spontaneous emission rate is a key factor in light-emitting device efficiency.

Purpose of the Study:

To evaluate the Purcell enhancement of spontaneous emission in optically-doped metal-dielectric-semiconductor light-emitting structures.
To explore the potential for designing efficient, high-speed optical sources.

Main Methods:

Utilizing a semiclassical oscillating point dipole model within the dielectric layer.
Analyzing Ag-SiO(2)-Si and Ag-SiO(2)-Si-SiO(2) structures.

Main Results:

Achieved spontaneous emission rate enhancements of 40-60 in Ag-SiO(2)-Si structures (600-1800 nm wavelength).
Observed strong preferential coupling to a Si waveguide mode in Ag-SiO(2)-Si-SiO(2) structures.
Demonstrated similar enhancements using Aluminum (Al) instead of Silver (Ag).

Conclusions:

Metal-dielectric-semiconductor structures can significantly enhance spontaneous emission rates.
These findings suggest a pathway for developing power-efficient, high-modulation-speed, CMOS-compatible optical sources.
The study highlights the synergy between electrical and plasmon-enhanced optical properties in MOS devices.