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Updated: Jun 26, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Correlation between in Situ Raman scattering and electrical conductance for an individual double-walled carbon
Shaoning Yuan1, Qing Zhang, Yumeng You
1Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, S1-B2c-20, 639798, Singapore.
Abstract:
In situ Raman scattering is performed on an individual semiconducting double-walled carbon nanotube (DWNT) in a field-effect transistor (FET) geometry, while the transfer characteristics of the DWNT-FET are measured. Through studying the Raman spectra with response to forward and backward gate voltage (V(gs)) sweeping, respectively, we observe hysteresis loops in the curves of G(-) peak frequency and the intensity ratio of G(-) to G(+) (I(G(-))/I(G(+))) as a function of V(gs). These loops correlate very well with the hysteretic transfer characteristics of the device. The clear correlations suggest that G(-) peak line width and I(G(-))/I(G(+)) increase with the carrier concentration in the DWNT induced by V(gs). In addition, unique G(-) peak line width variations with V(gs) can be attributed to interband electron transitions between the energy bands of two concentric shells of the DWNT excited by G phonons.
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