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Updated: Jun 26, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Highly conductive films of layered ternary transition-metal nitrides
Hongmei Luo1, Haiyan Wang, Zhengxing Bi
1Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA. hluo@lanl.gov
Abstract:
Film studies: Epitaxial films of BaZrN(2) (see TEM image) and BaHfN(2) are grown by polymer-assisted deposition on SrTiO(3) (STO) substrates. The films are phase-pure, allowing the intrinsic physical properties of the ternary nitrides to be studied. From 5 to 300 K, the films exhibit metallic-like resistivity-temperature behavior, with large residual resistivity ratios.
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