Fabrication of imprint stamp by using nanosphere lithography and its utilization to photoluminescence enhancement

Nanosphere lithography is proposed as a new technique for the fabrication of nanoscale pillars on p-GaN layer. This technique is an easy and simple process using a self-assembled monolayer of spheres, which act as etching masks to form pillars on a Si3N4 substrate, that could be utilized as a stamp for UV-based imprint lithography. We can apply the UV-based imprint technique in the field of solid-state lighting in order to extract more lights to out-world by texturing the outer surface of the light emitting diodes (LED) structure. Photoluminescence intensity from the pillar patterned GaN layer was higher than that from the unpatterned GaN layer by 2.5 times.