Related Experiment Video
Updated: Jun 25, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy
Bao-Lai Liang1, Zhi-Ming Wang, Xiao-Yong Wang
1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.
Abstract:
Ultralow density (approximately 10(6)/cm(2)) of twin InAs quantum dot (QD) hybrid structure was grown by a droplet epitaxy technique. The photoluminescence (PL) from ensemble and individual twin InAs QD structures showed a bimodal behavior and an energy transfer between the well-separated (approximately 190 nm) twin QDs, which was supposedly due to the special wetting ring that built the channel for exciton transfer. This research demonstrates a novel approach to fabricate lateral InAs QD pairs as the candidate for a laterally coupled QD molecule.

