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Excitation-wavelength dependence of fluorescence intermittency in CdSe nanorods
Kenneth L Knappenberger1, Daryl B Wong, Wei Xu
1Department of Chemistry, University of California, Berkeley, California 94720, USA.
Abstract:
The influence of excitation wavelength and embedding media on fluorescence blinking statistics of 4 nm x 20 nm cadmium selenide (CdSe) nanorods is investigated. Photon antibunching (PAB) experiments confirm nonclassical emission from single CdSe nanorods that exhibit a radiative lifetime of 26 +/- 13 ns. The blinking data show behaviors that can be categorized into two classes: excitation near the energy of the band gap and at energies exceeding 240 meV above the band gap. Excitation at the band gap energy (lambda >or= 560 nm) results in more pronounced "on" time probabilities in the distribution of "on" and "off" events, while those resulting from excitation exceeding the band gap by 240 meV or more (lambda
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