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Tunable stress and controlled thickness modification in graphene by annealing
Zhen Hua Ni1, Hao Min Wang, Yun Ma
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 1 Nanyang Walk, Block 5, Level 3, Singapore 637616.
ACS Nano
|February 12, 2009
Summary
This study demonstrates how to induce and control stress in graphene using thin film deposition and annealing. These methods allow for precise engineering of graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene possesses unique properties making it suitable for fundamental research and applications.
- Understanding process-induced defects and stress is crucial for optimizing graphene's performance.
Purpose of the Study:
- To experimentally investigate process-induced defects and stress in graphene.
- To explore methods for controlling stress and thickness in graphene layers.
Main Methods:
- Utilizing Raman spectroscopy and imaging to analyze defects and stress.
- Inducing compressive stress via SiO(2) deposition and annealing.
- Inducing tensile stress using a silicon capping layer.
Main Results:
- Defects in graphene result in defect-related Raman bands.
- Stress induces shifts in graphene's phonon frequency.
- Compressive stress up to 2.1 GPa and tensile stress around 0.7 GPa were achieved.
- Annealing temperature influences the magnitude of compressive stress and the number of graphene layers.
Conclusions:
- Process-induced stress and thickness significantly impact graphene's physical properties.
- Thickness and stress engineering offer a pathway to enhance graphene-based device performance.
- Selective stress induction or thickness reduction can be achieved using local heating techniques.
