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Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
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Highly conducting patterned Pd nanowires by direct-write electron beam lithography.

T Bhuvana1, G U Kulkarni

  • 1Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India.

ACS Nano
|February 12, 2009
PubMed
Summary

Palladium hexadecylthiolate serves as an electron resist for direct-write nanopatterning. Annealing creates conductive palladium nanowires suitable for nanocircuitry interconnects.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electron Beam Lithography

Background:

  • Development of novel electron resists is crucial for advanced nanofabrication.
  • Direct-write methods offer high resolution and flexibility in pattern generation.
  • Metallic nanowires are essential components for nanocircuitry and electronic devices.

Purpose of the Study:

  • To investigate palladium hexadecylthiolate as a negative-tone electron resist.
  • To characterize the nanopatterns produced by direct-write electron beam lithography.
  • To evaluate the potential of the patterned material for nanocircuitry applications.

Main Methods:

  • Direct-write electron beam lithography using palladium hexadecylthiolate as the resist.
  • Compositional analysis of as-written patterns.

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  • Post-treatment annealing at 230°C in air to form metallic nanowires.
  • Main Results:

    • Successful nanopatterning down to 30 nm resolution was achieved.
    • As-written patterns consist of small palladium nanocrystals (<5 nm) in a hydrocarbon matrix.
    • Annealing resulted in well-connected palladium nanocrystal networks (5-15 nm) with <10% residual carbon and bulk-like resistivity.

    Conclusions:

    • Palladium hexadecylthiolate is a viable negative-tone electron resist for high-resolution nanopatterning.
    • Post-annealing treatment transforms the resist into conductive metallic palladium nanowires.
    • The resulting palladium nanowires exhibit properties suitable for interconnects in nanocircuitry.