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Published on: October 23, 2018
Fabrication and characterization of Teflon-bonded periodic GaAs structures for THz generation
Sarah E Trubnick1, Sergei Ya Tochitsky, Chandrashekhar Joshi
1Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095, USA.
Abstract:
A novel technique for low-temperature bonding of GaAs wafers using an interboundary Teflon film is developed. A fabricated stack of ten 25x25 mm2 diced wafers demonstrated 75% transmission of a 10 microm CO2 laser beam. Modeling of these Teflon-bonded (TB) structures as sequences of Fabry-Perot etalons gives a good agreement with transmission measurements. A 20x20 mm2 quasi-phase matched structure of five wafers pumped by CO2 laser lines generated the narrow-band THz radiation at a wavelength of 343 microm via a difference frequency mixing process.
