Related Experiment Video
Updated: Jun 25, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices
Yongfeng Li1, Toshiro Kaneko, Jing Kong
1Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan. yfli@plasma.ecei.tohoku.ac.jp
Abstract:
The photoinduced electrical transport properties of C(59)N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV light exposure by the decrease of source-drain current upon light exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes negligible when the wavelength is increased to 480 nm. The photoinduced electron transfer is proposed to take place inside C(59)N@SWNTs due to the specific electronic structure of C(59)N, the heteromolecule bonding of which is sensitive to light.
More Related Videos
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

