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Bandgap engineered reverse type-I CdTe/InP/ZnS core-shell nanocrystals for the near-infrared

Sunghoon Kim1, Wooyoung Shim, Heonjin Seo

  • 1Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea.

Chemical Communications (Cambridge, England)
|February 26, 2009
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...