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Updated: Jun 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
J Rogel-Salazar1, D D C Bradley, J R Cash
1Electronic Materials Group, Department of Chemistry, Imperial College London, London, UKSW7 2AY.
An adaptive grid method-of-lines (MOL) efficiently models organic semiconductor devices by solving stiff ordinary differential equations (ODEs). This robust simulation technique offers accurate results and simpler coding for charge transport and recombination.
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