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Updated: Jun 25, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Axial p-n junctions realized in silicon nanowires by ion implantation
S Hoffmann1, J Bauer, C Ronning
1Laboratory for Mechanics of Materials and Nanostructures, Empa Materials Science and Technology, Thun, Switzerland.
Abstract:
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.
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