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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for

Patrick Rinke1, Anderson Janotti, Matthias Scheffler

  • 1Materials Department, University of California, Santa Barbara, California 93106, USA.

Physical Review Letters
|March 5, 2009
PubMed

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