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Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor

M Tran1, H Jaffrès, C Deranlot

  • 1Unité Mixte de Physique CNRS-Thales, Route départementale 128, 91767 Palaiseau Cedex and Université Paris-Sud 91405, Orsay, France. michael.tran@thalesgroup.com

Physical Review Letters
|March 5, 2009
PubMed

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