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Updated: Jun 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Localized spins on graphene.

P S Cornaglia1, Gonzalo Usaj, C A Balseiro

  • 1Centro Atómico Bariloche and Instituto Balseiro, 8400 Bariloche, Argentina.

Physical Review Letters
|March 5, 2009
PubMed
Summary
This summary is machine-generated.

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This study explores magnetic impurities on graphene, revealing they enable spin-polarized currents and large magnetoresistance. These effects are linked to the Kondo effect, influencing graphene

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Mechanics

Background:

  • Graphene's unique electronic properties are sensitive to impurities.
  • Magnetic impurities can significantly alter material characteristics.

Purpose of the Study:

  • Investigate the behavior of magnetic impurities on graphene.
  • Characterize the impact of these impurities on electronic and transport properties.

Main Methods:

  • Numerical renormalization group (NRG) method.
  • Analysis of spectral, thermodynamic, and scattering properties.
  • Utilized scanning tunneling microscopy (STM) for spin-polarized current injection.

Main Results:

  • Detailed description of impurity properties.

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  • Demonstrated injection of spin-polarized currents via STM.
  • Observed strong spin-dependent scattering leading to spin-polarized currents and large magnetoresistance.
  • Kondo screening of impurity spin in gated graphene at low temperatures.

    • Conclusions:

    • Magnetic impurities profoundly influence graphene's electronic and transport properties.
    • Anomalous magnetotransport properties are recoverable above Kondo temperature.
    • Potential for spintronic applications in graphene-based devices.