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Updated: Jun 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy
Zhimei Sun1, Jian Zhou, Andreas Blomqvist
1College of Materials, Xiamen University, 361005 Xiamen, China. zmsun@xmu.edu.cn
Abstract:
On the basis of ab initio molecular dynamics simulations, large voids mainly surrounded by Te atoms are observed in molten and amorphous Ge2Sb2Te5, which is due to the clustering of two- and threefold coordinated Te atoms. Furthermore, pressure shows a significant effect on the clustering of the under coordinated Te atoms and hence the formation of large voids. The present results demonstrate that both vacancies and Te play an important role in the fast reversible phase transition process.
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