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Updated: Jun 25, 2026

Fabrication of Spatially Confined Complex Oxides

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

Intrinsic tunneling in phase separated manganites.

G Singh-Bhalla¹, S Selcuk, T Dhakal

¹Department of Physics, University of Florida, Gainesville, Florida 32611, USA.

Physical Review Letters

|March 5, 2009

Summary

This summary is machine-generated.

We found electron tunneling in (La,Pr,Ca)MnO3, creating high resistance. Applying a magnetic field collapses these barriers, causing a significant resistance drop.

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Area of Science:

Condensed Matter Physics
Materials Science
Magnetism and Spintronics

Background:

Phase-separated manganites exhibit complex electronic and magnetic properties.
Understanding transport mechanisms in these materials is crucial for device applications.
Intrinsic insulating regions and their role in electron transport were not fully understood.

Purpose of the Study:

To investigate direct electron tunneling across intrinsic insulating regions in (La,Pr,Ca)MnO3.
To elucidate the role of intrinsic tunnel barriers (ITBs) in the material's resistance.
To explore the effect of magnetic fields on ITBs and magnetoresistance.

Main Methods:

Fabrication of submicrometer wide bridges of phase-separated (La,Pr,Ca)MnO3.
Electrical transport measurements as a function of temperature and magnetic field.
Analysis of resistance plateaus and field-induced resistance drops.

Main Results:

Evidence of direct electron tunneling across intrinsic insulating regions was observed.
Metastable, temperature-independent, high-resistance plateaus were attributed to ITBs in a ferromagnetic state.
Application of a magnetic field extinguished the ITBs, leading to sharp, colossal, low-field resistance drops.

Conclusions:

Intrinsic tunnel barriers significantly influence the low-field electrical resistance of (La,Pr,Ca)MnO3.
Magnetic fields effectively suppress these ITBs, enabling colossal magnetoresistance.
Experimental findings align with theoretical predictions of domain walls at the insulating phase boundaries.