Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Crystal Density01:19

Crystal Density

The crystal lattice structure of a material allows us to determine how many molecules exist in its unit cell. With this information, alongside the unit-cell parameters - three distance parameters (a, b, c) and three angular parameters (α, β, γ).Density (ρ) = (Z × M) / (a × b × c × NA)where:Z is the number of formula units per unit cellM is the molar mass of the substancea, b, and c are the edge lengths of the unit cellNA is Avogadro’s numberFor a simple cubic lattice, atoms are located only at...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Magnetic Damping01:17

Magnetic Damping

Eddy currents can produce significant drag on motion, called magnetic damping. For instance, when a metallic pendulum bob swings between the poles of a strong magnet, significant drag acts on the bob as it enters and leaves the field, quickly damping the motion.
If, however, the bob is a slotted metal plate, the magnet produces a much smaller effect. When a slotted metal plate enters the field, an emf is induced by the change in flux; however, it is less effective because the slots limit the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Blocking interaction of sclerostin loop3 with osteoblastic LRP4 counteracts bone loss without increasing arterial stiffness during mechanical unloading.

Journal of orthopaedic translation·2026
Same author

A method for constructing an installation accuracy control system for ultra-high-speed maglev supports considering known-point precision.

Scientific reports·2026
Same author

High-efficiency kilowatt-level continuous-wave Yb:Y<sub>2</sub>O<sub>3</sub> ceramic thin-disk laser.

Optics letters·2026
Same author

3D Nanotubular Nanoporous N-Doped Graphene with Curvature-Induced Zincophilicity for Ultrafast and Dendrite-Free Zn Deposition.

Nano letters·2026
Same author

Light-Promoted Copper-Mediated Radical Alkylarylation of Alkenes via Truce-Smiles Rearrangement.

The Journal of organic chemistry·2026
Same author

Mid-infrared order-tunable Laguerre-Gaussian beams generation from an Er:CaF<sub>2</sub> laser.

Optics express·2026

Related Experiment Video

Updated: Jun 25, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Passive mode-locking performance with a mixed Nd:Lu(0.5)Gd(0.5)VO(4) crystal.

Haohai Yu1, Huaijin Zhang, Zhengping Wang

  • 1State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China.

Optics Express
|March 5, 2009
PubMed
Summary

This study demonstrates continuous-wave mode-locking of a novel Nd:Lu(0.5)Gd(0.5)VO(4) mixed crystal laser, achieving ultrashort pulses for advanced laser applications.

More Related Videos

High-Resolution Neutron Spectroscopy to Study Picosecond-Nanosecond Dynamics of Proteins and Hydration Water
08:48

High-Resolution Neutron Spectroscopy to Study Picosecond-Nanosecond Dynamics of Proteins and Hydration Water

Published on: April 28, 2022

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
07:42

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

Published on: December 15, 2021

Related Experiment Videos

Last Updated: Jun 25, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

High-Resolution Neutron Spectroscopy to Study Picosecond-Nanosecond Dynamics of Proteins and Hydration Water
08:48

High-Resolution Neutron Spectroscopy to Study Picosecond-Nanosecond Dynamics of Proteins and Hydration Water

Published on: April 28, 2022

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
07:42

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

Published on: December 15, 2021

Area of Science:

  • Laser Physics
  • Materials Science
  • Optoelectronics

Background:

  • Neodymium-doped vanadate crystals are crucial for solid-state lasers.
  • Mixed vanadate crystals offer tunable properties for laser performance.
  • Mode-locking is essential for generating ultrashort laser pulses.

Purpose of the Study:

  • To report the first continuous-wave (cw) mode-locking of a diode-pumped Nd:Lu(0.5)Gd(0.5)VO(4) mixed crystal laser.
  • To characterize the performance of this novel laser system.
  • To demonstrate the potential of mixed vanadate crystals in high-performance lasers.

Main Methods:

  • Utilized a compact three-mirror cavity design.
  • Employed diode-pumping for efficient energy transfer.
  • Implemented mode-locking techniques to generate ultrashort pulses.

Main Results:

  • Achieved stable 5.5 ps pulses at a 147 MHz repetition rate.
  • Obtained an average output power of 5.31 W at 16 W absorbed pump power.
  • Demonstrated a high optical conversion efficiency of 33.2% and a slope efficiency of 46.7%.

Conclusions:

  • Successfully demonstrated cw mode-locking in a Nd:Lu(0.5)Gd(0.5)VO(4) laser.
  • The mixed crystal laser shows excellent performance in terms of pulse duration, power, and efficiency.
  • This work highlights the potential of Nd:Lu(0.5)Gd(0.5)VO(4) for developing advanced laser sources.