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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Numerical analysis of resonant and lasing properties at a defect region within a random structure

Hideki Fujiwara1, Yosuke Hamabata, Keiji Sasaki

  • 1Research Institute for Electronic Science, Hokkaido University, Sapporo, 001-0020, Japan. fuji@es.hokudai.ac.jp

Optics Express
|March 5, 2009
PubMed

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