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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Shuttling germanium atoms into branched polysilanes
Harald Wagner1, Judith Baumgartner, Thomas Müller
1Institut für Anorganische Chemie, Technische Universität Graz, Stremayrgasse 16/IV, A-8010 Graz, Austria.
Journal of the American Chemical Society
|March 24, 2009
Summary
Germanium atoms in permethylated oligosilanes migrate to silylated positions during Lewis acid catalysis. This rearrangement enables building molecules with concentrated germanium cores through repeated germyl group introduction and migration.
Area of Science:
- Organometallic Chemistry
- Silicon and Germanium Chemistry
- Catalysis
Background:
- Permethylated oligosilanes are versatile silicon-based compounds.
- Understanding the reactivity of germylated silicon compounds is crucial for novel material synthesis.
Purpose of the Study:
- To investigate the Lewis acid-catalyzed rearrangement of trimethylgermylated oligosilanes.
- To explore the potential for constructing molecules with high germanium content.
Main Methods:
- Lewis acid-catalyzed rearrangement reactions.
- Quantum-mechanical computations using the B3LYP/6-311+G(d,p) level of theory.
Main Results:
- Observed a strong tendency for germanium atoms to migrate to highly silylated positions.
- Demonstrated a sequential method for creating molecules with germanium-rich cores.
- Computational studies revealed a reaction cascade involving germylium and silylium intermediates via 1,2-shifts.
Conclusions:
- Lewis acid catalysis facilitates controlled germanium atom migration in oligosilanes.
- This rearrangement strategy is effective for synthesizing novel organosilicon-germanium compounds.
- The reaction mechanism involves ionic intermediates and sigmatropic shifts.
