The Electrical Double Layer
Debye–Huckel–Onsager Conductance Equation
Electrical Conductivity
Theory of Metallic Conduction
Semiconductors
Electrical Transport
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Updated: Jun 24, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Alan B Kaiser1, Cristina Gómez-Navarro, Ravi S Sundaram
1MacDiarmid Institute for Advanced Materials and Nanotechnology, SCPS, Victoria University of Wellington, PO Box 600, Wellington, New Zealand.
We studied electrical conduction in reduced graphene oxide monolayers. Two-dimensional variable-range hopping and electric-field-driven tunneling explain the transport, with tunneling dominating at low temperatures.
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