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Updated: Jun 24, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Contact geometry and conductance of crossed nanotube junctions under pressure
Felipe A Bulat1, Luise Couchman, Weitao Yang
1Department of Chemistry, Duke University, Durham, North Carolina 27708, USA.
Abstract:
We explored the relative stability, structure, and conductance of crossed nanotube junctions with dispersion corrected density functional theory. We found that the most stable junction geometry, not studied before, displays the smallest conductance. While the conductance increases as force is applied, it levels off very rapidly. This behavior contrasts with a less stable junction geometry that show steady increase of the conductance as force is applied. Electromechanical sensing devices based on this effect should exploit the conductance changes close to equilibrium.
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