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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Related Experiment Video

Updated: Jun 24, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Deposited silicon high-speed integrated electro-optic modulator.

Kyle Preston1, Sasikanth Manipatruni, Alexander Gondarenko

  • 1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

Optics Express
|April 1, 2009
PubMed
Summary

We developed a micrometer-scale electro-optic modulator using deposited silicon, achieving 2.5 Gbps speed and 10 dB extinction ratio. This silicon modulator enables large-scale integration of photonic networks on microprocessor chips.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Traditional silicon photonics rely on silicon-on-insulator platforms.
  • Integrating active optical devices with microelectronics is challenging.

Purpose of the Study:

  • To demonstrate a micrometer-scale electro-optic modulator fabricated entirely from deposited silicon.
  • To explore the potential of polycrystalline silicon for integrated photonics.

Main Methods:

  • Fabrication of a micrometer-scale device using deposited silicon.
  • Utilization of an embedded p(+)n(-)n(+) diode for optical modulation.
  • Exploitation of the free carrier plasma dispersion effect for modulation.

Main Results:

  • Achieved operation at 2.5 Gbps with a 10 dB extinction ratio.
  • Polycrystalline silicon demonstrated high quality factor optical resonators and sub-nanosecond carrier injection.
  • The device is fabricated entirely from deposited silicon.

Conclusions:

  • Deposited silicon can be used to create high-performance electro-optic modulators.
  • This approach offers an alternative to traditional silicon-on-insulator platforms.
  • Enables monolithic integration of photonic networks on microprocessor chips.