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Related Concept Videos

Action Potentials01:41

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MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
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An ultra low-power CMOS automatic action potential detector.

Benoit Gosselin1, Mohamad Sawan

  • 1Polystim Neurotechnologies Laboratory, Electrical Engineering Department, Ecole Polytechnique de Montréal, Montréal, Quebec, Canada. benoit.gosselin@polymtl.ca

IEEE Transactions on Neural Systems and Rehabilitation Engineering : a Publication of the IEEE Engineering in Medicine and Biology Society
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PubMed
Summary

We developed a low-power biopotential detector for neural recording implants. It accurately distinguishes action potentials (APs) from background noise using an energy-based preprocessor and delay element, enhancing neural prostheses performance.

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Area of Science:

  • Biomedical Engineering
  • Integrated Circuit Design
  • Neuroscience

Background:

  • Accurate neural recording is crucial for advanced neural prostheses.
  • Existing detectors face challenges in discriminating action potentials (APs) from background noise, especially in low-power wireless implants.
  • Miniaturization and ultra-low power consumption are key requirements for multichannel neural recording devices.

Purpose of the Study:

  • To present a novel low-power complementary metal-oxide semiconductor (CMOS) analog integrated biopotential detector.
  • To achieve accurate automatic discrimination of action potentials (APs) from background neural activity.
  • To enable high-performance neural recording in wireless multichannel implantable devices.

Main Methods:

  • Developed an energy-based preprocessor and a linear delay element for AP discrimination.
  • Implemented the delay element using a low-power continuous-time filter with a ninth-order equiripple allpass transfer function.
  • Utilized subthreshold Operational Transconductance Amplifiers (OTAs) and dedicated circuit techniques for ultra-low power and high dynamic range.

Main Results:

  • The fabricated CMOS 0.18-micrometer chip achieved ultra-low power consumption of 780 nW, operating in the submicrowatt range.
  • The detector demonstrated accurate automatic detection of APs from background activity.
  • The circuit's compact size (0.07 mm²) is suitable for massive integration in multichannel devices.

Conclusions:

  • The proposed low-power biopotential detector effectively discriminates action potentials, improving waveform integrity for neural prostheses.
  • The ultra-low power and small form factor make it ideal for integration into wireless multichannel neural recording implants.
  • The circuit's performance validates its suitability for advanced brain-computer interfaces and neural recording applications.