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Updated: Jun 24, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Chemical and electronic properties of the ITO/Al(2)O(3) interface
Yvonne Gassenbauer1, André Wachau, Andreas Klein
1Institute of Materials Science, Darmstadt University of Technology, D-64287, Darmstadt, Germany.
Abstract:
The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.
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